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Proceedings Paper

Current-voltage and capacitance-voltage characterization of MS, MiS, and MOS structures on semiconducting diamond
Author(s): Michelle L. Hartsell; Henry A. Wynands; Bradley Alan Fox
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Paper Abstract

The electrical characteristics of metal-semiconducting diamond (MS), metal-insulating diamond-semiconducting diamond (MiS), and metal-oxide-semiconducting diamond (MOS) structures on single- crystal semiconducting diamond have been compared. Vertical structures were fabricated with the MS diode, MiS diode, and MOS capacitor on one face of the crystals and the ohmic contacts on the opposite face. Ohmic contacts, formed by ion implantation of B, exhibited reduced contact impedance. Current-voltage and capacitance-voltage characteristics of the three structures were measured. The MS and MiS diode structures exhibited large forward bias currents, whereas the insulating SiO2 limited the forward bias current through the MOSC structure. The MiS structure exhibited the lowest reverse bias leakage currents (<10 pA/mm2), whereas the values for the MOSC and MS structures were 1 and 2 orders of magnitude larger, respectively. For all samples the uncompensated acceptor concentration of the semiconducting diamond was 1-2 X 1016 cm-3. These values were consistent with the secondary-ion mass spectroscopy measurements of the B concentration in similar natural type IIb diamonds.

Paper Details

Date Published: 1 April 1994
PDF: 8 pages
Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171754
Show Author Affiliations
Michelle L. Hartsell, Kobe Steel USA, Inc. (United States)
Henry A. Wynands, Kobe Steel USA, Inc. (United States)
Bradley Alan Fox, Kobe Steel USA, Inc. (United States)

Published in SPIE Proceedings Vol. 2151:
Diamond-Film Semiconductors
Mike A. Tamor; Mohammad Aslam, Editor(s)

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