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Proceedings Paper

Clutter suppression in range/Doppler map using wavelet filters
Author(s): Shenq Wang; Anthony Reid; Chris McGill; Roger Ikeda; Gregory Zent
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Paper Abstract

We have measured the time-resolved photoconductive response of a strained InGaAs/InGaAsP/InP multiple quantum well laser structure as a function of temperature and bias. It is found that the hole escape is dominated by tunneling at reverse biases of greater than -0.5 V at all temperatures. Under forward bias, recombination is dominant at temperatures below approximately equals 90 K while thermal escape processes prevail at higher temperatures. From Arrhenius plots of the hole escape time, the activation energy from the ground level has been determined as a function of bias and is in good agreement with a valence band offset of 75 percent of the total band offset. The intercepts of the plots yielded a scattering parameter of 6 ps. The carrier dynamics within the well were simulated using a simple model of thermionic emission and gave good qualitative agreement. The calculations indicate that the structures have the potential for extremely fast detection.

Paper Details

Date Published: 15 March 1994
PDF: 14 pages
Proc. SPIE 2242, Wavelet Applications, (15 March 1994); doi: 10.1117/12.170039
Show Author Affiliations
Shenq Wang, Texas Instruments Inc. (United States)
Anthony Reid, Texas Instruments Inc. (United States)
Chris McGill, Texas Instruments Inc. (United States)
Roger Ikeda, Texas Instruments Inc. (United States)
Gregory Zent, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 2242:
Wavelet Applications
Harold H. Szu, Editor(s)

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