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Proceedings Paper

Excitonic recombinations in Cd0.90Mn0.10Te/CdTe heterostructures grown by pulsed-laser evaporation and epitaxy
Author(s): Alain P. Roth; R. Benzaquen; P. Finnie; P. D. Berger; Jan J. Dubowski
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Paper Abstract

Cd0.90Mn0.10Te/CdTe heterostructures grown on CdZnTe substrates by pulsed laser evaporation and epitaxy have been studied by low temperature photoluminescence. The structures were grown from fluxes of Cd-Te and Cd-Mn-Te resulting from the ablation of solid CdTe and Cd1-xMnxTe targets with Nd:YAG and excimer XeCl lasers, respectively. The samples chosen for this work are multiple quantum wells (MQW) and superlattices (SL) with buffer and cap layers of various thicknesses and compositions. They have a fixed nominal quantum well width of 2 nm and barriers varying between 4.5 and 16.5 nm, with several combinations of CdTe and Cd0.90Mn0.10Te buffer and cap layers.

Paper Details

Date Published: 1 February 1994
PDF: 8 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167576
Show Author Affiliations
Alain P. Roth, National Research Council Canada (Canada)
R. Benzaquen, National Research Council Canada (Canada)
P. Finnie, National Research Council Canada (Canada)
P. D. Berger, National Research Council Canada (Canada)
Jan J. Dubowski, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures
Ian W. Boyd, Editor(s)

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