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Proceedings Paper

Synthesis of silicon-based dielectric films by excimer laser ablation
Author(s): Eric Fogarassy; Claude Fuchs; Adelilah Slaoui; Salome de Unamuno; Jean-Paul Stoquert; Vladimir I. Marine; Bernard Lang
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Paper Abstract

Silicon oxide, oxynitride and nitride films are deposited at low temperature (<EQ 450 degree(s)C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The process conditions are optimized in order to deposit good quality silicon oxide and silicon nitride thin films.

Paper Details

Date Published: 1 February 1994
PDF: 12 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167554
Show Author Affiliations
Eric Fogarassy, Ctr. de Recherches Nucleaires (France)
Claude Fuchs, Ctr. de Recherches Nucleaires (France)
Adelilah Slaoui, Ctr. de Recherches Nucleaires (France)
Salome de Unamuno, Ctr. de Recherches Nucleaires (France)
Jean-Paul Stoquert, Ctr. de Recherches Nucleaires (France)
Vladimir I. Marine, Faculte des Sciences de Luminy (France)
Bernard Lang, IPCMS (France)

Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures
Ian W. Boyd, Editor(s)

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