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Proceedings Paper

Manufacture of diffractive structures in metal and semiconductor thin films by pulse laser irradiation
Author(s): Zoya N. Kalyashova; Vladimir E. Sabinin; V. I. Korolev; E. P. Mesnyankin
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Paper Abstract

The metal and semiconductor films (MSF), deposited on the glass and metal substrates, have been used as recording materials when fabricating diffraction gratings by pulse laser irradiation of 1.06 micrometers . The processes of photothermal ablation are the basis for mechanism of diffraction structure formation. The gratings at spatial frequencies of 100 and 500 mm-1 have been fabricated without postexposure treatment by pulse laser irradiation of 20, 100 and 1000 ns in duration. It has been shown that dependence of threshold energy density Ethr from pulse duration (tau) is well approximated by function Ethrvaries direct as(root)(tau) . The relief-phase component of the grating's diffraction efficiency (DE) has been measured.

Paper Details

Date Published: 1 February 1994
PDF: 6 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167553
Show Author Affiliations
Zoya N. Kalyashova, S.I. Vavilov State Optical Institute (Russia)
Vladimir E. Sabinin, S.I. Vavilov State Optical Institute (Russia)
V. I. Korolev, S.I. Vavilov State Optical Institute (Russia)
E. P. Mesnyankin, S.I. Vavilov State Optical Institute (Russia)


Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures
Ian W. Boyd, Editor(s)

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