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Proceedings Paper

Structural and optical properties of semiconductor heterojunctions and superlattices grown by pulsed-laser evaporation and epitaxy
Author(s): Jan J. Dubowski
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Paper Abstract

Basic mechanisms of laser ablation and the most recent results of laser ablation research are discussed here with a focus on semiconductor materials. The pulsed laser evaporation and epitaxy (PLEE) method, which has been developed for epitaxial growth of Cd1-xMnxTe (CMT) thin films and CdTe-CMT multiple quantum wells and superlattices, is reviewed. This method of deposition is based on the application of Nd:YAG and XeCl excimer lasers which are exclusively used for the ablation of solid targets: no other vapor generation devices, such as Knudsen cells, are used in PLEE. Microstructures of CdTe- Cd1-xMnxTe (0 < x < 0.70) have been grown by the ablation of CdTe, Cd1-xMnxTe and Cd targets.

Paper Details

Date Published: 1 February 1994
PDF: 14 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167548
Show Author Affiliations
Jan J. Dubowski, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures
Ian W. Boyd, Editor(s)

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