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Proceedings Paper

Excimer laser-induced metallization for Si and GaAs microelectronics
Author(s): Michel Meunier; Maleck Tabbal; Marc Suys; Ricardo Izquierdo; Arthur Yelon; Edward Sacher; Suzie Poulin
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Paper Abstract

We have investigated both the large area excimer laser-induced deposition of W and it silicides on GaAs to form thermally stable Schottky contacts, and the reduction of Cu(I) and Cu(II) compounds for the deposition of Cu interconnects for Si microelectronics. Using a KrF excimer laser at 25 mJ/cm2 and a mixture of WF6, SiH4 and Ar, metallic W is deposited with an average growth rate of 1 angstrom/pulse. For Cu deposition, the precursor Cu(hfac)(TMVS) gives much purer deposits than the Cu(II) compounds which have been studied. For both processes, possible deposition mechanisms are discussed in terms of gas phase and surface reactions.

Paper Details

Date Published: 1 February 1994
PDF: 7 pages
Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); doi: 10.1117/12.167545
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal (Canada)
Maleck Tabbal, Ecole Polytechnique de Montreal (Canada)
Marc Suys, Ecole Polytechnique de Montreal (Canada)
Ricardo Izquierdo, Ecole Polytechnique de Montreal (Canada)
Arthur Yelon, Ecole Polytechnique de Montreal (Canada)
Edward Sacher, Ecole Polytechnique de Montreal (Canada)
Suzie Poulin, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 2045:
Laser-Assisted Fabrication of Thin Films and Microstructures

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