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Proceedings Paper

Fabrication of sub-40-nm p-n junctions for 0.18-um MOS device applications using a cluster-tool-compatible, nanosecond thermal doping technique
Author(s): Kurt H. Weiner; Anthony M. McCarthy
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Paper Abstract

In this paper, we introduce an alternative deep-submicrometer doping technology, Projection Gas Immersion Laser Doping (P-GILD). Representing the marriage of lithography and diffusion, P-GILD is a resistless, step-and-repeat doping process that utilizes excimer laser light patterned by a dielectric reticle to selectively heat and, thereby, dope regions of an integrated circuit. Results of physical and electrical characterization are presented for ultra-shallow p+-n and n+-p junctions produced by gas immersion laser doping (GILD), a phenomenologically identical technique that utilizes an aluminum contact mask rather than a dielectric reticle to pattern the beam. Junctions produced using GILD exhibit uniformly-doped, abrupt impurity profiles with no apparent defect formation in the silicon.

Paper Details

Date Published: 15 February 1994
PDF: 8 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167367
Show Author Affiliations
Kurt H. Weiner, Lawrence Livermore National Lab. (United States)
Anthony M. McCarthy, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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