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Proceedings Paper

Characterization of rapid thermally grown dielectrics by surface charge analysis and atomic force microscopy
Author(s): John M. Grant; Lynn R. Allen
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Paper Abstract

With the advent of Rapid Thermal Processing to produce gate dielectrics, the need for quick characterization of the dielectrics has increased. The effect of the process conditions on the dielectric quality need to be considered during process development. Pre-growth cleaning processes may also affect the quality of the dielectric material. Surface Charge Analysis (SCA) and Atomic Force Microscopy (AFM) provide measurements that may be used to aid process development. In this work, SCA and AFM have been used to examine the effects of NH4OH:H2O2:H2O cleaning on (100) silicon wafers. The data indicate a correlation between surface roughness and interface trap density, with rougher surfaces having lower densities of interface traps. Also included in this work is a SCA comparison of oxides grown using Rapid thermal Oxidation in O2 and N2O ambients.

Paper Details

Date Published: 15 February 1994
PDF: 12 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167363
Show Author Affiliations
John M. Grant, Sharp Microelectronics Technology, Inc. (United States)
Lynn R. Allen, Sharp Microelectronics Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; John R. Hauser; James A. Bondur; Kiefer Elliott; John R. Hauser; Dim-Lee Kwong; Asit K. Ray; James A. Bondur, Editor(s)

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