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Proceedings Paper

Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control
Author(s): Bruce W. Peuse; Allan Rosekrans
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Paper Abstract

An emissivity independent method of temperature control for rapid thermal processing of silicon wafers is demonstrated. In-situ wafer temperature is determined by measurement of wafer thermal expansion via a laser autofocus mechanism. A closed loop temperature control system based on this technique is integrated into a commercial rapid thermal processor with fully automatic wafer handling capability. A preliminary test using a titanium silicidation process were performed using wafer expansion thermometry. The results of this test demonstrate that this technique can provide improved wafer to wafer process repeatability.

Paper Details

Date Published: 15 February 1994
PDF: 10 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167351
Show Author Affiliations
Bruce W. Peuse, Peak Systems, Inc. (United States)
Allan Rosekrans, Peak Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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