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Proceedings Paper

Electrical sensors for monitoring rf plasma sheaths
Author(s): Mark A. Sobolewski; James K. Olthoff
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Paper Abstract

We have investigated the use of radio-frequency (rf) current and voltage measurements to monitor the electrical characteristics of rf plasmas and to predict changes in ion kinetic energy distributions. These studies were performed at 2.7 and 13.3 Pa (20 and 100 mTorr) in a Gaseous Electronics Conference RF Reference Cell in mixtures of argon with oxygen, nitrogen and water. It is expected that the measurement techniques described here could be extended to monitor the sheath above a wafer during plasma etching to obtain information about changes in the condition of the wafer surface and the energies of ions bombarding it.

Paper Details

Date Published: 15 February 1994
PDF: 11 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167350
Show Author Affiliations
Mark A. Sobolewski, National Institute of Standards and Technology (United States)
James K. Olthoff, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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