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Proceedings Paper

Process modification to reduce damage to reactive ion etched surfaces
Author(s): Durga Misra; O. W. Purbo; C. R. Selvakumar
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Paper Abstract

An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N2 reduces the surface damage during reactive ion etching of silicon in a SF6 + O2 plasma even though the N2 additive improved the etch rate and selectivity by 44 - 64%.

Paper Details

Date Published: 15 February 1994
PDF: 10 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167346
Show Author Affiliations
Durga Misra, New Jersey Institute of Technology (United States)
O. W. Purbo, Institute of Technology Bandung (Indonesia)
C. R. Selvakumar, Univ. of Waterloo (Canada)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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