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Proceedings Paper

Application of RTA to a 0.8-μm BiCMOS process
Author(s): Robert H. Reuss
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Paper Abstract

RTA has been established as a key process element in a sub-micron BiCMOS flow. The major advantage of RTA is that a temperature pulse > 1000 degree(s)C can be used to break-up the interfacial oxide in the polysilicon emitter contact to provide enhanced current gain with low-emitter resistance but with little impact on the CMOS. The RTA emitter anneal also serves to simultaneously flow BPSG to planarize the wafer prior to metallization. Contact reflow is also advantageous for a tapered structure to improve metal step-coverage.

Paper Details

Date Published: 15 February 1994
PDF: 12 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167345
Show Author Affiliations
Robert H. Reuss, Motorola Semiconductor Products Sector (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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