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Proceedings Paper

Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field
Author(s): Masafumi Tanabe; Akio Matsuda; Takeshi Sunada; Taro Nomura; Hideki Fujimoto; Toshio Hayashi
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Paper Abstract

A diode type magnetically enhanced reactive ion etching system was used for Al alloy films and a triode type magnetically enhanced reactive ion etching system was used for SiO2 films. A same rotational permanent magnet was used for the diode and triode reactors. Excellent etching characteristics of TiN/Al-1%Si-0.5%Cu/TiN and SiO2 films were obtained at low pressure of about 1Pa. Simulations were also performed for drift motions of secondary electrons in the cathode sheath.

Paper Details

Date Published: 15 February 1994
PDF: 8 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167343
Show Author Affiliations
Masafumi Tanabe, ULVAC Japan, Ltd. (Japan)
Akio Matsuda, ULVAC Japan, Ltd. (Japan)
Takeshi Sunada, ULVAC Japan, Ltd. (Japan)
Taro Nomura, ULVAC Japan, Ltd. (Japan)
Hideki Fujimoto, ULVAC Japan, Ltd. (Japan)
Toshio Hayashi, ULVAC Japan, Ltd. (Japan)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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