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Proceedings Paper

High-selectivity magnetically enhanced reactive ion etching of boron nitride films
Author(s): Donna R. Cote; Sonny Nguyen; David Dobuzinsky; Cathy Basa; Bernhard Neureither
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Paper Abstract

Oxygen and tetrafluorocarbon magnetically enhanced reactive ion etching (MERIE) of plasma chemical vapor deposited boron nitride (BN) and silicon boron nitride (SiBN) was studied for both blanket and submicron patterned films. The relative etch selectivities of the BN and SiBN to oxide and nitride were determined. In general, oxygen-rich O2/CF4 MERIE produce very high etch selectivity results while maintaining vertical etch profiles. This etch process expands the potential for use of BN/SiBN in fabrication of sub-half micron devices.

Paper Details

Date Published: 15 February 1994
PDF: 14 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167340
Show Author Affiliations
Donna R. Cote, IBM Technology Products Div. (United States)
Sonny Nguyen, IBM Technology Products Div. (United States)
David Dobuzinsky, IBM Technology Products Div. (United States)
Cathy Basa, IBM Technology Products Div. (United States)
Bernhard Neureither, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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