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Proceedings Paper

Magnetically enhanced reactive ion etching of silylated resist in O2/Ar mixtures
Author(s): Myung-Seon Kim; Jin-Woong Kim; Jun-mo Kim; Yeo-Song Seol; Hae-Sung Park; Soo-Han Choi
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Paper Abstract

This study describes the etching behavior of the silylated resist in a magnetically enhanced reactive ion etcher under the pressure ranges from 3 to 10 mTorr. In a pure oxygen plasma, the resist undercut beneath the silylated mask layer and isotropic resist profile were generated independent of etch conditions. Compared to the tri-level-resist process, the resist undercut tended to be reduced in the top imaging process by silylation. It was found that the addition of Ar to an O2-plasma was effective to reduce the resist undercut due to the consumption of the silylated mask layer. However, in an Ar-rich plasma, the resist profiles appeared to be positively sloped by the excessive consumption of the silylated resist.

Paper Details

Date Published: 15 February 1994
PDF: 11 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167338
Show Author Affiliations
Myung-Seon Kim, Hyundai Semiconductor R&D Lab. (South Korea)
Jin-Woong Kim, Hyundai Semiconductor R&D Lab. (South Korea)
Jun-mo Kim, Hyundai Semiconductor R&D Lab. (South Korea)
Yeo-Song Seol, Hyundai Semiconductor R&D Lab. (South Korea)
Hae-Sung Park, Hyundai Semiconductor R&D Lab. (South Korea)
Soo-Han Choi, Hyundai Semiconductor R&D Lab. (South Korea)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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