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Proceedings Paper

Native oxide removal on Si surface by NF3-added hydrogen plasma downstream treatment
Author(s): Jun Kikuchi; Masao Iga; Shuzo Fujimura; Hiroshi Yano
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Paper Abstract

NF3 was injected into the downstream of H2 + H2O plasma to produce etchant for SiO2 without dissociating NF3 in order to minimize residual fluorine, and native oxide on Si(111) surfaces was removed by the downstream treatment. ATR FT-IR measurement showed that native oxide on the Si surface was removed and a hydrogen terminated surface was obtained. AES measurement revealed that residual fluorine was below detection limits.

Paper Details

Date Published: 15 February 1994
PDF: 6 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167335
Show Author Affiliations
Jun Kikuchi, Fujitsu Ltd. (Japan)
Masao Iga, Fujitsu Ltd. (Japan)
Shuzo Fujimura, Fujitsu Ltd. (Japan)
Hiroshi Yano, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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