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Proceedings Paper

Variable energy neutral beam design and kinetic energy etching
Author(s): Lee Chen
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Paper Abstract

A simple flange-mounted neutral beam source is invented to produce a low energy nonthermalized fast neutral radical beam. This variable energy neutral radical beam can activate the SiO2 or Si surface for chemical reaction depending on the set incident energy and the chemical system chosen. The fast neutral radical beam energy is continuously adjustable (2 eV < Ek < 200 eV). The beam flux is typically 5 X 1015 cm-2 sec-1 (approximately 4 L) and higher beam flux (e.g., approximately 50 L) can be obtained by varying the plasma and the neutralizer parameters. An uniform large diameter plasma is also made for the production of neutral beam covering 5' wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.

Paper Details

Date Published: 15 February 1994
PDF: 18 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167334
Show Author Affiliations
Lee Chen, SEMATECH (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; John R. Hauser; James A. Bondur; Kiefer Elliott; John R. Hauser; Dim-Lee Kwong; Asit K. Ray; James A. Bondur, Editor(s)

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