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Proceedings Paper

Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer
Author(s): Byung G. Park; Clifford A. King; David J. Eaglesham; T. W. Sorsch; B. Weir; H. S. Luftman; Jeffrey Bokor; Y. O. Kim
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Paper Abstract

The rapid thermal chemical vapor deposition of heavily boron-doped Ge layers on silicon substrates is characterized and optimized for the purpose of ultrashallow junction applications. Incorporation of a very high concentration of boron in the Ge layer is observed with a moderate flow rate (2 - 20 sccm) of 1% B2H6 in hydrogen. The surface coverage of the B:Ge layer depends strongly on the B2H6 flow rate, favoring higher content of boron for better coverage. The substrate temperature during deposition also shows a strong effect on the film morphology with 550 degree(s)C yielding the most uniform surface.

Paper Details

Date Published: 15 February 1994
PDF: 10 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167333
Show Author Affiliations
Byung G. Park, AT&T Bell Labs. (United States)
Clifford A. King, AT&T Bell Labs. (United States)
David J. Eaglesham, AT&T Bell Labs. (United States)
T. W. Sorsch, AT&T Bell Labs. (United States)
B. Weir, AT&T Bell Labs. (United States)
H. S. Luftman, AT&T Bell Labs. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)
Y. O. Kim, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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