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Proceedings Paper

Application of a cluster tool for control of bipolar polysilicon emitter transistor characteristics
Author(s): Robert H. Reuss; Chris J. Werkhoven
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Paper Abstract

A cluster tool technique featuring a vapor HF clean followed by controlled growth of a thin interfacial oxide prior to polysilicon deposition is described. The tool is used in the fabrication of polysilicon emitter contact bipolar transistors. Parametric data show that base current and beta vary systematically with oxide thickness but other device parameters remain unchanged. An initial assessment of run-to-run-process reproducibility is also described. The tool has significant potential for future BiCMOS processes which will require precision control of the interfacial layer and low- temperature processing.

Paper Details

Date Published: 15 February 1994
PDF: 12 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167330
Show Author Affiliations
Robert H. Reuss, Motorola Semiconductor Products Sector (United States)
Chris J. Werkhoven, ASM International NV (Netherlands)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; James A. Bondur; James A. Bondur; Kiefer Elliott; John R. Hauser; John R. Hauser; Dim-Lee Kwong; Asit K. Ray, Editor(s)

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