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Proceedings Paper

Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview
Author(s): G. W. Yoon; Jin-ha Kim; Unnikrishnan Sreenath; Dim-Lee Kwong
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Paper Abstract

Rapid thermal chemical vapor deposition (RT-CVD) technology is strategically important for deep submicron ULSI manufacturing because of trends towards reduced thermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing and the considerable progress made in developing RT-CVD as a integrated processing module capable of meeting the stringent requirements of ULSI device fabrication.

Paper Details

Date Published: 15 February 1994
PDF: 9 pages
Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167329
Show Author Affiliations
G. W. Yoon, Univ. of Texas/Austin (United States)
Jin-ha Kim, Univ. of Texas/Austin (United States)
Unnikrishnan Sreenath, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2091:
Microelectronic Processes, Sensors, and Controls
Kiefer Elliott; John R. Hauser; James A. Bondur; Kiefer Elliott; John R. Hauser; Dim-Lee Kwong; Asit K. Ray; James A. Bondur, Editor(s)

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