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Proceedings Paper

CD results for 6 inch 250 mil PBS photoblanks for a 0.50 micron generation photomask process
Author(s): Chris K. Keith
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Paper Abstract

This paper discusses work done at Intel to meet CD specifications for a 0.50 micron generation photomask process using 6' 250 mil photoblanks coated with PBS resist. Initial CD uniformity results indicated that the develop tool was the main source of non-uniformity. To reduce the contribution of the develop tool, two strategies were pursued simultaneously to ensure that the within-plate linewidth uniformity (3 sigma) of the etched CD's would be 50 nm. The first strategy was to improve the capability of the current developer and to determine if any write parameters could be modified to allow for more process latitude. The second strategy was to evaluate new developers and identify a possible replacement. Both of these strategies will be presented with accompanying results for CD uniformity of the developed and etched CD structures.

Paper Details

Date Published: 15 February 1994
PDF: 9 pages
Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); doi: 10.1117/12.167250
Show Author Affiliations
Chris K. Keith, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 2087:
13th Annual BACUS Symposium on Photomask Technology and Management
Edward C. Grady; Jack P. Moneta, Editor(s)

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