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Proceedings Paper

Dry etch patterning of chrome on glass optical masks using P(SI-CMS) resist
Author(s): Anthony E. Novembre; David A. Mixon; Christophe Pierrat; Chester S. Knurek; Michael W. Stohl
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Paper Abstract

Poly(trimethylsilylmethyl methacrylate-co-chloromethylstyrene) P(SI-CMS) has been designed to function as a negative-acting electron beam sensitive resist. This material is shown to be applicable to processes in which the chrome layer of 1X, 5X, and phase shifting masks is patterned via plasma etching. P(SI-CMS) containing 90 mole % trimethylsilylmethyl methacrylate and 10 mole % chloromethylstyrene exhibits thermal properties (Tg > 80 degree(s)C; Td > 250 degree(s)C) which provide stability in reactive ion etch environments. In a Cl2 - O2 plasma P(SI.90-CMS.10) resist etches a factor of 4.25 slower than chromium, and 16 times slower than novolac based resists.

Paper Details

Date Published: 15 February 1994
PDF: 7 pages
Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); doi: 10.1117/12.167248
Show Author Affiliations
Anthony E. Novembre, AT&T Bell Labs. (United States)
David A. Mixon, AT&T Bell Labs. (United States)
Christophe Pierrat, AT&T Bell Labs. (United States)
Chester S. Knurek, AT&T Bell Labs. (United States)
Michael W. Stohl, AT&T Microelectronics (United States)

Published in SPIE Proceedings Vol. 2087:
13th Annual BACUS Symposium on Photomask Technology and Management
Edward C. Grady; Jack P. Moneta, Editor(s)

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