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Proceedings Paper

Porous silicon - a new material studied by IR spectroscopy
Author(s): Wolfgang Theiss; M. Arntzen; Stefan Facsko; M. Feuerbacher; M. Wernke; Peter Grosse; H. Muender; M. Thoenissen
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Paper Abstract

We show how IR spectroscopy can be employed successfully in the analysis of porous silicon, e.g., to monitor important parameters as the hydrogen and oxygen concentration or the layer thickness nondestructively.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166757
Show Author Affiliations
Wolfgang Theiss, RWTH Aachen (Germany)
M. Arntzen, RWTH Aachen (Germany)
Stefan Facsko, RWTH Aachen (Germany)
M. Feuerbacher, RWTH Aachen (Germany)
M. Wernke, RWTH Aachen (Germany)
Peter Grosse, RWTH Aachen (Germany)
H. Muender, Institut fuer Schicht- und Ionentechnik (Germany)
M. Thoenissen, Institut fuer Schicht- und Ionentechnik (Germany)


Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy

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