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Proceedings Paper

Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers
Author(s): Brian W. Gregory; Susan Stephens; Richard A. Dluhy; Sajan Thomas; John Stickney; Lawrence A. Bottomley
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Paper Abstract

We have investigated whether large ATR crystals of Ge can be made atomically flat and resistant to atmospheric oxidation, thus enabling us to use them simultaneously as an IR- transparent ATR waveguide and a scanning probe conducting substrate. A protocol has been developed for producing atomically flat Ge substrates resistant to oxidation; this method involves UHV annealing and the electrochemical deposition of a well-ordered, passivating atomic layer of tellurium (Te) onto the Ge surface in order to eliminate further reoxidation of the clean, ordered, Ge substrate. We have obtained STM images in air of the Ge:Te surface and found no sign of disordered oxide formation. IR spectroscopy of monolayer films transferred onto the Sb-doped Ge crystal show little difference with spectra obtained from normal, monocrystalline Ge ATR crystals.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166681
Show Author Affiliations
Brian W. Gregory, Univ. of Georgia (United States)
Susan Stephens, Univ. of Georgia (United States)
Richard A. Dluhy, Univ. of Georgia (United States)
Sajan Thomas, Univ. of Georgia (United States)
John Stickney, Univ. of Georgia (United States)
Lawrence A. Bottomley, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy
John E. Bertie; Hal Wieser, Editor(s)

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