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Proceedings Paper

Chemical-bond analysis of hydrogen-rich silicon oxynitride
Author(s): Adele Sassella; Alessandro Borghesi; S. Rojas; Luca Zanotti
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Paper Abstract

We present measurements of the infrared absorption of Si-H, N-H, N-H2, and Si-N bonds in silicon oxynitride films. The shift of the position of the absorption bands in the spectra of different samples is related to the atomic environment of the bonds in each film.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166632
Show Author Affiliations
Adele Sassella, Univ. di Pavia (Italy)
Alessandro Borghesi, Univ. di Modena (Italy)
S. Rojas, SGS-Thomson Microelectronics (Italy)
Luca Zanotti, SGS-Thomson Microelectronics (Italy)

Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy
John E. Bertie; Hal Wieser, Editor(s)

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