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Proceedings Paper

Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon
Author(s): Lawrence T. Ho; F. Y. Lin; W. J. Lin
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Paper Abstract

The group-II element beryllium when introduced into silicon forms more than one acceptor center. Their infrared absorption spectra have been investigated using a high-resolution FTIR spectrometer.

Paper Details

Date Published: 31 January 1994
PDF: 2 pages
Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166627
Show Author Affiliations
Lawrence T. Ho, Institute of Physics (Taiwan)
F. Y. Lin, Institute of Physics (Taiwan)
W. J. Lin, Institute of Physics (Taiwan)


Published in SPIE Proceedings Vol. 2089:
9th International Conference on Fourier Transform Spectroscopy
John E. Bertie; Hal Wieser, Editor(s)

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