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Proceedings Paper

Investigation of charge photoinjection and transport processes in photoelectric structures with memory
Author(s): Sergey L. Vinogradov; Vitaly E. Shubin
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Paper Abstract

Photoelectric structures with memory (PESM) of the type Au-ZnSe-SiO2-Si provide conversion of an optical image to a charge pattern in a high-resistance wide band-gap semiconductor ZnSe having a high concentration of trapping sites (TS). The recorded light gives rise to a photoinjection of charge carriers from semitransparent Au electrode to ZnSe. Then electrons or holes drift through the ZnSe layer to the SiO2 boundary and are localized on TS. So, built-in charge spatial distribution of filled TS is in accordance with an input optical image. The image may be read by a local photosignal produced in the Si surface charge region by optical raster scanning.

Paper Details

Date Published: 21 January 1994
PDF: 6 pages
Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); doi: 10.1117/12.165998
Show Author Affiliations
Sergey L. Vinogradov, P.N. Lebedev Physical Institute (Russia)
Vitaly E. Shubin, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 2051:
International Conference on Optical Information Processing
Yuri V. Gulyaev; Dennis R. Pape, Editor(s)

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