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Proceedings Paper

Enhanced barrier height GaInAs MSM Schottky barrier photodiodes
Author(s): S. V. Averin; A. Kohl; A. Mesquida Kusters; Klaus Heime
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Paper Abstract

The p+-cap layer of InP together with 80 nm of undoped (Nb equals 5 1014 cm-3) assist layer of InP for the first time were used to increase the Schottky barrier height (up to 0.73 e.V.) on GaInAs and to create high speed MSM photodetectors on it. The average dark current density is 1.6 10-4 A/cm2 -- the lowest known value on the GaInAs semiconductor material. A rise time of 37 ps for the impulse response at (lambda) equals 1.3 micrometers was measured for a MSM diode with 2 micrometers fingers and 2 micrometers gaps and an active area of 30 X 30 micrometers 2.

Paper Details

Date Published: 21 January 1994
PDF: 6 pages
Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); doi: 10.1117/12.165991
Show Author Affiliations
S. V. Averin, Institute of Radio Engineering and Electronics (Russia)
A. Kohl, Technical Univ. of Aachen (Germany)
A. Mesquida Kusters, Technical Univ. of Aachen (Germany)
Klaus Heime, Technical Univ. of Aachen (Germany)


Published in SPIE Proceedings Vol. 2051:
International Conference on Optical Information Processing
Yuri V. Gulyaev; Dennis R. Pape, Editor(s)

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