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Proceedings Paper

New features of the reflection of far-infrared radiation from a structure with high-doped GaAs layer
Author(s): Gennady N. Shkerdin; Alexander I. Voronko
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Paper Abstract

The mechanism of strong optical nonlinearity connected with the heating of conduction electrons by far infrared electromagnetic radiation in GaAs is theoretically investigated. It is shown that transitions of electrons from (Gamma) (sigma ) minimum to L(sigma ) minima of energy in conduction band give the main contribution into the effect. It is found that the intensity of electromagnetic wave necessary for effective modulation of reflection coefficient from many layered structure can be strongly reduced in the condition of leaky TM-polarized wave-guide mode excitation in the structure.

Paper Details

Date Published: 21 January 1994
PDF: 6 pages
Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); doi: 10.1117/12.165978
Show Author Affiliations
Gennady N. Shkerdin, Institute of Radio Engineering and Electronics (Russia)
Alexander I. Voronko, Institute of Radio Engineering and Electronics (Russia)

Published in SPIE Proceedings Vol. 2051:
International Conference on Optical Information Processing
Yuri V. Gulyaev; Dennis R. Pape, Editor(s)

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