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Proceedings Paper

AlGaAs for nonlinear integrated optics at 1.55 um
Author(s): Alain Villeneuve; George I. Stegeman; J. Stewart Aitchison; Kadhair Al-Hemyari; Charles N. Ironside; C. C. Yang; Chih Hong Lin; Hao-Hsiung Lin
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Paper Abstract

Semiconductors and in particular AlGaAs operated at photon energies below half the band gap have proven over the last few years to be optimum materials for studying nonlinear guided phenomena, including ultrafast all-optical switching. Here we report experimental results on a range of characterization measurements and implementations of all-optical switching devices.

Paper Details

Date Published: 5 January 1994
PDF: 12 pages
Proc. SPIE 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications, (5 January 1994); doi: 10.1117/12.165609
Show Author Affiliations
Alain Villeneuve, CREOL/Univ. of Central Florida (Canada)
George I. Stegeman, CREOL/Univ. of Central Florida (United States)
J. Stewart Aitchison, Univ. of Glasgow (United Kingdom)
Kadhair Al-Hemyari, Univ. of Glasgow (United States)
Charles N. Ironside, Univ. of Glasgow (United Kingdom)
C. C. Yang, The Pennsylvania State Univ. (United States)
Chih Hong Lin, National Taiwan Univ. (Germany)
Hao-Hsiung Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 2041:
Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications
Michel Piche; Paul W. Pace, Editor(s)

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