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Proceedings Paper

Excited-state structure and dephasing of point defects in widegap semiconductors: ultrafast four-wave mixing spectroscopy of N-V centers in diamond
Author(s): Stephen C. Rand; A. Lenef; Steve W. Brown
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Paper Abstract

Pulsed laser spectroscopy has been applied to determine details of the excited state structure of the N-V center in diamond. Excited state splittings and dephasing behavior are reported.

Paper Details

Date Published: 5 January 1994
PDF: 3 pages
Proc. SPIE 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications, (5 January 1994); doi: 10.1117/12.165608
Show Author Affiliations
Stephen C. Rand, Univ. of Michigan (United States)
A. Lenef, Univ. of Michigan (United States)
Steve W. Brown, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 2041:
Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications
Michel Piche; Paul W. Pace, Editor(s)

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