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Proceedings Paper

Manufacture of diffractive structure in Sb2S3 film by pulse laser irradiation
Author(s): Zoya N. Kalyashova; Vladimir E. Sabinin; V. I. Korolev; E. P. Mesnyankin
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Paper Abstract

The semiconductor film Sb2S3, deposited on the glass and metal substrates, has been used as a recording material when fabricating diffraction gratings by pulse laser irradiation of 0.53 and 1.06 micrometers . The processes of photothermal ablation are the basis for the mechanism of diffraction structure formation. The gratings at spatial frequencies of 100, 500, and 800 mm-1 have been fabricated without postexposure treatment by pulse laser irradiation of 20 and 1000 ns in duration. The diffraction efficiency of the manufactured gratings for different exposure energy densities has been measured.

Paper Details

Date Published: 10 December 1993
PDF: 7 pages
Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); doi: 10.1117/12.165364
Show Author Affiliations
Zoya N. Kalyashova, S.I. Vavilov State Optical Institute (Russia)
Vladimir E. Sabinin, S.I. Vavilov State Optical Institute (Russia)
V. I. Korolev, S.I. Vavilov State Optical Institute (Russia)
E. P. Mesnyankin, S.I. Vavilov State Optical Institute (Russia)


Published in SPIE Proceedings Vol. 2108:
International Conference on Holography, Correlation Optics, and Recording Materials
Oleg V. Angelsky, Editor(s)

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