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Proceedings Paper

High-resolution image device on the base of Me-ChDS structure
Author(s): Andrei M. Andriesh; Sergei A. Malkov; Victor I. Verlan
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Paper Abstract

The Me-Chalcogenide glassy semiconductor-dielectric-semiconductor (Me-As2S3- SiO2-Si) structure was formed and the writing and readout processes of the optical image with high resolution were studied. The structures make the positive and negative images possible. The device works in both accumulation of the small signals and real time. The space functional separation of the recording and readout allows us to carry out repetition readout of the image and other operations.

Paper Details

Date Published: 29 December 1993
PDF: 8 pages
Proc. SPIE 1987, Recording Systems: High-Resolution Cameras and Recording Devices and Laser Scanning and Recording Systems, (29 December 1993); doi: 10.1117/12.165190
Show Author Affiliations
Andrei M. Andriesh, Institute of Applied Physics (Moldova)
Sergei A. Malkov, Institute of Applied Physics (Moldova)
Victor I. Verlan, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 1987:
Recording Systems: High-Resolution Cameras and Recording Devices and Laser Scanning and Recording Systems

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