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Proceedings Paper

Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications
Author(s): Hans Zogg; Alexander Fach; Clau Maissen; Jiri Masek; Stefan Blunier; K. Kessler; Peter Mueller; Carmine Paglino; Stefan I. Teodoropol; A. N. Tiwari
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Paper Abstract

MBE growth and IR device fabrication with epitaxial IV-VI layers on Si-substrates is reviewed and some new results are included. Epitaxy is achieved using a stacked BaF2/CaF2 or CaF2 buffer layer. While photolithographic delineation techniques are somewhat difficult with BaF2 (which is soluble in water), reliable wet-etching techniques are easy with the CaF2 buffer. Photovoltaic IV-VI sensors on Si(111) substrates are fabricated with cut-off wavelengths covering the whole atmospheric 3 - 5 and 8 - 14 micrometers window. They offer the possibility for low cost IR focal plane arrays with sensitivities similar to MCT, but with much less demanding material processing steps.

Paper Details

Date Published: 7 December 1993
PDF: 12 pages
Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164936
Show Author Affiliations
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)
Alexander Fach, Swiss Federal Institute of Technology (Switzerland)
Clau Maissen, Swiss Federal Institute of Technology (Switzerland)
Jiri Masek, Swiss Federal Institute of Technology (Switzerland)
Stefan Blunier, Swiss Federal Institute of Technology (Switzerland)
K. Kessler, Swiss Federal Institute of Technology (Switzerland)
Peter Mueller, Swiss Federal Institute of Technology (Switzerland)
Carmine Paglino, Swiss Federal Institute of Technology (Switzerland)
Stefan I. Teodoropol, Swiss Federal Institute of Technology (Canada)
A. N. Tiwari, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 2021:
Growth and Characterization of Materials for Infrared Detectors
Randolph E. Longshore; Jan W. Baars, Editor(s)

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