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Proceedings Paper

Vapor phase epitaxy of ZnTe on silicon substrates
Author(s): Ishwara B. Bhat; Wen-Sheng Wang; Sudhir B. Trivedi; G. V. Jagannathan; Ronald G. Rosemeier; James J. Kennedy
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Paper Abstract

We report for the first time the growth of high quality Zn Te epilayers on silicon substrates by Metal Organic Vapor Phase Epitaxy (MOVPE). ZnTe layers up to 7μm thick were grown on (001) silicon substrates at 420°C-450°C substrate temperatures. The layers were mirror shiny and smooth, devoid of growth features like layered or stepped structures. The x-ray double crystal diffraction showed that best ZnTe layers exhibited Full Width at Half Maximum (FWHM) of 110 arc seconds. Further optimization of the growth procedure will make this material very useful for the potential development of iow cost infrared focal plane arrays and other optoelectronic devices which use direct wide band gap ZnTe.

Paper Details

Date Published: 7 December 1993
PDF: 6 pages
Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164934
Show Author Affiliations
Ishwara B. Bhat, Rensselaer Polytechnic Institute (United States)
Wen-Sheng Wang, Rensselaer Polytechnic Institute (Taiwan)
Sudhir B. Trivedi, Brimrose Corp. of America (United States)
G. V. Jagannathan, Brimrose Corp. of America (United States)
Ronald G. Rosemeier, Brimrose Corp. of America (United States)
James J. Kennedy, U.S. Army Night Vision and Electronic Sensors Directorate (United States)


Published in SPIE Proceedings Vol. 2021:
Growth and Characterization of Materials for Infrared Detectors
Randolph E. Longshore; Jan W. Baars, Editor(s)

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