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Proceedings Paper

Lead sulfide infrared detectors
Author(s): V. Subramanian; K. K. Janarda Pillai; K. R. Murali; N. Rangarajan
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Paper Abstract

The photosensitivity of lead chalcogenides in the IR region has been known for a long time. These detectors exhibit wide range of electrical characteristics. A cheap and easy chemical bath deposition process has been utilized to deposit PbS onto glass substrates. Well adherent nonporous `p' type PbS films of thickness 1 - 1.5 microns were obtained. These films, after heat treatment, showed a dark resistance of 0.5 - 1 M(Omega) with a high signal-to-noise ratio of 1000 with a D* (800 degree(s)C, 500 Hz, 2 Hz) of 2.6 X 1010 cm Hz1/2 W-1.

Paper Details

Date Published: 7 December 1993
PDF: 9 pages
Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); doi: 10.1117/12.164933
Show Author Affiliations
V. Subramanian, Central Electrochemical Research Institute (India)
K. K. Janarda Pillai, Central Electrochemical Research Institute (India)
K. R. Murali, Central Electrochemical Research Institute (India)
N. Rangarajan, Central Electrochemical Research Institute (India)


Published in SPIE Proceedings Vol. 2021:
Growth and Characterization of Materials for Infrared Detectors
Randolph E. Longshore; Jan W. Baars, Editor(s)

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