Share Email Print

Proceedings Paper

X-ray dosimetry with low-capacitance silicon detector
Author(s): Doina N. Lazarovici; Cristian C. Lazarovici; Valerica Cimpoca; Radu Ruscu; Gh. Caragheorgheopol; Eugenia T. Halmagean; Marian N. Udrea-Spinea; S. Negru; A. Paunescu; L. Staicu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The paper presents a low capacitance, low reverse current, suited for x-ray dosimetry at room temperature. The detector is a `drift chamber' type, with a transversal field collection of charge carriers. Based on the low noise performance of the detector and the first stage of electronics, a pocket size x-ray dose ratemeter is proposed, for the 10...60 keV energy range.

Paper Details

Date Published: 16 December 1993
PDF: 8 pages
Proc. SPIE 2009, X-Ray Detector Physics and Applications II, (16 December 1993); doi: 10.1117/12.164727
Show Author Affiliations
Doina N. Lazarovici, Institute of Atomic Physics (Romania)
Cristian C. Lazarovici, Institute of Atomic Physics (Romania)
Valerica Cimpoca, Institute of Atomic Physics (Romania)
Radu Ruscu, Institute of Atomic Physics (Romania)
Gh. Caragheorgheopol, Institute of Atomic Physics (Romania)
Eugenia T. Halmagean, Research and Development Institute for Semiconductor Devices (Romania)
Marian N. Udrea-Spinea, Semiconductor Devices Baneasa S.A. (Romania)
S. Negru, Semiconductor Devices Baneasa S.A. (Romania)
A. Paunescu, Semiconductor Devices Baneasa S.A. (Romania)
L. Staicu, Semiconductor Devices Baneasa S.A. (Romania)

Published in SPIE Proceedings Vol. 2009:
X-Ray Detector Physics and Applications II
Victor J. Orphan, Editor(s)

© SPIE. Terms of Use
Back to Top