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Proceedings Paper

Monolithic optoelectronic transistor: a new optical neuron device
Author(s): Brian F. Aull; Elliott R. Brown; Paul A. Maki; Kirby B. Nichols; Susan C. Palmateer; Thomas A. Lind
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Paper Abstract

An integrated optoelectronic device, the monolithic optoelectronic transistor (MOET), has been demonstrated. The MOET functions as an optical sum-and-threshold device with large- signal optical gain. It can be electrically biased to achieve either abrupt switching thresholds or quasi-sigmoidal optical transfer characteristics, and excitatory and inhibitory inputs can be incorporated through a simple modification of the single-input device. Initial MOET devices displayed an optical gain greater than 10 and an output contrast ratio exceeding 50. The MOET has promising characteristics as a building block of optoelectronically implemented neural networks and image preprocessing systems.

Paper Details

Date Published: 9 November 1993
PDF: 6 pages
Proc. SPIE 2026, Photonics for Processors, Neural Networks, and Memories, (9 November 1993); doi: 10.1117/12.163588
Show Author Affiliations
Brian F. Aull, Lincoln Lab./MIT (United States)
Elliott R. Brown, Lincoln Lab./MIT (United States)
Paul A. Maki, Lincoln Lab./MIT (United States)
Kirby B. Nichols, Lincoln Lab./MIT (United States)
Susan C. Palmateer, Lincoln Lab./MIT (United States)
Thomas A. Lind, Lincoln Lab./MIT (United States)


Published in SPIE Proceedings Vol. 2026:
Photonics for Processors, Neural Networks, and Memories
Stephen T. Kowel; William J. Miceli; Joseph L. Horner; Bahram Javidi; Stephen T. Kowel; William J. Miceli, Editor(s)

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