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Proceedings Paper

Implications of carrier mobility limitations for GaAs as an x-ray detector
Author(s): S. M. Grant; Timothy J. Sumner; J. P. Warren; D. Alexiev; K. S. A. Butcher
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Paper Abstract

Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x-ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage- current, noise, etc) have been explored for each device.

Paper Details

Date Published: 19 November 1993
PDF: 11 pages
Proc. SPIE 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV, (19 November 1993); doi: 10.1117/12.162849
Show Author Affiliations
S. M. Grant, Imperial College of Science, Technology and Medicine (United Kingdom)
Timothy J. Sumner, Imperial College of Science, Technology and Medicine (United Kingdom)
J. P. Warren, Imperial College of Science, Technology and Medicine (United Kingdom)
D. Alexiev, Australian Nuclear Science and Technology Organisation (Australia)
K. S. A. Butcher, Australian Nuclear Science and Technology Organisation (Australia)


Published in SPIE Proceedings Vol. 2006:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV
Oswald H. W. Siegmund, Editor(s)

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