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Proceedings Paper

X-ray, EUV, UV, and optical quantum efficiency measurements of laser-annealed ion-implanted CCDs
Author(s): Robert A. Stern; Lawrence Shing; Morley M. Blouke
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Paper Abstract

We report quantum efficiency measurements of back-illuminated, ion-implanted, laser- annealed charge coupled devices (CCDs) in the wavelength range 13 - 10,000 angstroms. The equivalent quantum efficiency (EQE equals equivalent photons detected per incident photon) range from a minimum of 5% at 1216 angstroms to a maximum of 87% at 135 angstroms. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that it can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 2006, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV, (19 November 1993); doi: 10.1117/12.162842
Show Author Affiliations
Robert A. Stern, Lockheed Palo Alto Research Lab. (United States)
Lawrence Shing, Lockheed Palo Alto Research Lab. (United States)
Morley M. Blouke, Tektronix, Inc. (United States)


Published in SPIE Proceedings Vol. 2006:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IV
Oswald H. W. Siegmund, Editor(s)

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