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Proceedings Paper

Carrier capture time: relevance to laser performance
Author(s): Jos E. M. Haverkort; Paul W. M. Blom; Joachim H. Wolter
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Paper Abstract

We present an experimental and theoretical study of the carrier capture time in a semiconductor quantum well. We observed for the first time the predicted oscillations of the phonon emission induced capture time experimentally and found good agreement with theory. Calculations show that not only the LO-phonon emission induced capture time (ph-capture) oscillates as a function of well width, but also the carrier-carrier scattering induced capture time (c-c capture) oscillates by more than an order of magnitude as a function of the active layer design. Moreover, the calculated amount of excess carrier heating also oscillates as a function of quantum well thickness. Recently, it has been shown that the carrier capture time is directly related to the nonlinear gain in a quantum well laser. As a result, the nonlinear gain can be tailored by optimizing the capture efficiency using a proper design of the active layer in a quantum well laser.

Paper Details

Date Published: 19 November 1993
PDF: 11 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162815
Show Author Affiliations
Jos E. M. Haverkort, Eindhoven Univ. of Technology (Netherlands)
Paul W. M. Blom, Eindhoven Univ. of Technology (Netherlands)
Joachim H. Wolter, Eindhoven Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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