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Proceedings Paper

Line-narrowing and fast modulation of AlGaAs and InGaAlP semiconductor diode lasers
Author(s): Guglielmo M. Tino; Massimo Inguscio; Francesco S. Pavone; Francesco Marin
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Paper Abstract

Semiconductor diode lasers emitting in the visible and near-infrared region of the spectrum are valuable sources of coherent radiation in several fields of fundamental and applied research. In particular, the properties of spectral purity and frequency tunability are major issues for their use in spectroscopy or in coherent communication systems. The emission characteristics can be improved using optical feedback from external cavities. A reduction of the emission linewidth by several orders of magnitude was achieved for visible and near-infrared lasers. Although the frequency modulation capabilities are usually affected by the presence of the optical feedback, we found that under special resonant conditions it is possible to have simultaneously a narrow-linewidth laser with a high-frequency modulation capability. Modulation frequencies up to several GHz were achieved. Applications of these devices to spectroscopy are described.

Paper Details

Date Published: 19 November 1993
PDF: 7 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162814
Show Author Affiliations
Guglielmo M. Tino, Univ. di Napoli (Italy)
Massimo Inguscio, European Lab. for Nonlinear Spectroscopy (Italy)
Francesco S. Pavone, European Lab. for Nonlinear Spectroscopy (Italy)
Francesco Marin, Scuola Normale Superiore (Italy)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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