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Proceedings Paper

Magneto-optical study of band parameters in the GaAs/(Al,Ga)As MQW heterosystem
Author(s): Ruben P. Seisyan; S. I. Kokhanovskii; Alexey V. Kavokin; A. I. Nesvizhskii
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Paper Abstract

The exciton binding energy have been calculated as function of the magnetic field and the quantum well width for the various exciton and magnetic states. The variational calculation carried out in the adiabatic approach has shown the sizeable enhancement of the exciton binding energy with the increase of the external field. For rather strong magnetic fields the exciton binding energy has been found in the framework of the perturbation theory. The results were used for the analysis of the spectra of light transmission through the thin semiconductor film containing GaAs/Alo,3Gll(),7As multiple quantum well structure in the external magnetic field tuning from 0 to 7 .S T at T = 2 K.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162812
Show Author Affiliations
Ruben P. Seisyan, A.F. Ioffe Physical-Technical Institute (Russia)
S. I. Kokhanovskii, A.F. Ioffe Physical-Technical Institute (Russia)
Alexey V. Kavokin, A.F. Ioffe Physical-Technical Institute (Russia)
A. I. Nesvizhskii, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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