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Proceedings Paper

Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region
Author(s): Masahito Yamaguchi; Masato Morifuji; Hitoshi Kubo; Kenji Taniguchi; Chihiro Hamaguchi; Claire F. Gmachl; Erich Gornik
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Paper Abstract

Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 angstrom)/AlGaAs(20 angstrom) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5 eV - 2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9 eV- 2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162810
Show Author Affiliations
Masahito Yamaguchi, Osaka Univ. (Japan)
Masato Morifuji, Osaka Univ. (Japan)
Hitoshi Kubo, Osaka Univ. (Japan)
Kenji Taniguchi, Osaka Univ. (Japan)
Chihiro Hamaguchi, Osaka Univ. (Japan)
Claire F. Gmachl, Technische Univ. Muenchen (Germany)
Erich Gornik, Technische Univ. Wien (Austria)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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