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Proceedings Paper

Near-surface quantum wells in GaAs: recovery of emission efficiency via surface passivation by hydrogen and stability effects
Author(s): Andrea Frova; V. Emiliani; Mario Capizzi; B. Bonanni; Ying-Lan Chang; YongHang Zhang; James L. Merz
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Paper Abstract

The role of surface states in reducing the radiative efficiency of a GaAs/AlGaAs quantum well (QW), situated in proximity of the surface, has been investigated. The near-surface QW photoluminescence (PL) was utilized as a probe of the effects of room-temperature hydrogen irradiation and of the subsequent evolution of the system in time. The e1 - hh1 PL at 1.4 K of various near-surface wells, differing in distance from the surface, was found to drop when the AlGaAs barrier was made thinner than 150 angstroms, due to short-circuiting recombination processes at the surface. The data were interpreted in terms of electron and hole tunneling to surface states. A study of the stability of the passivation effect -- samples being investigated again after an eight-month-long exposure to air, or after annealing in vacuum -- is indicative of important changes in the lifetimes of the different radiative and non-radiative processes associated with the well.

Paper Details

Date Published: 19 November 1993
PDF: 7 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162809
Show Author Affiliations
Andrea Frova, Univ. di Roma (Italy)
V. Emiliani, Univ. di Roma (Italy)
Mario Capizzi, Univ. di Roma (Italy)
B. Bonanni, Univ. di Roma (Italy)
Ying-Lan Chang, Univ. of California/Santa Barbara (United States)
YongHang Zhang, Univ. of California/Santa Barbara (United States)
James L. Merz, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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