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Proceedings Paper

Influence of ultra-thin AlAs barriers on the optical properties of GaAs/AlGaAs quantum-well structures
Author(s): Marcello Colocci; Massimo Gurioli; Jose A. Martinez-Lozano; Bruno Chastaingt; C. Deparis; Gerard Neu; J. Massies
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Paper Abstract

The optical properties of AlGaAs/AlAs/GaAs double barrier quantum well (DBQW) structures, obtained by the insertion of ultra-thin barriers of AlAs between the AlxGa1-xAs alloy and the GaAs wells, are investigated by means of continuous-wave and time-resolved photoluminescence techniques. Particular attention is devoted to the structure of the electronic states and to the recombination lifetime of the photoexcited carriers. We demonstrate the usefulness of this novel type of heterostructure as a further degree of freedom toward a tailoring of the band edges in GaAs/AlGaAs QW systems and also for the study of the carrier dynamics in the limit of very shallow subbands. Clear evidence of the transitions between 2D - 3D exciton behavior and between type I - type II recombinations are found depending on the thickness of GaAs and AlAs layers.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162808
Show Author Affiliations
Marcello Colocci, Univ. di Firenze (Italy)
Massimo Gurioli, Univ. di Firenze (Italy)
Jose A. Martinez-Lozano, Univ. di Firenze (Italy)
Bruno Chastaingt, CNRS-Sophia Antipolis (France)
C. Deparis, CNRS-Sophia Antipolis (France)
Gerard Neu, CNRS-Sophia Antipolis (France)
J. Massies, CNRS-Sophia Antipolis (France)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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