Share Email Print
cover

Proceedings Paper

Quasi-stationary states and type I and type II heterojunctions in InAsSbP/InAs system
Author(s): Mikhail S. Bresler; Oleg B. Gusev; Irina N. Yassievich; Yury P. Yakovlev; Nonna V. Zotova
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have predicted and confirmed experimentally that in InAs/InAs1-x-ySbxPy system both type I and type II heterojunctions can exist. The occurrence of type II structure favors stimulated radiation on interface transition. In isotype p-InAs/P-InAsSbP heterojunctions with x equals 0.12 and y equals 0.25 a new interface line is observed which can be interpreted as an evidence of electron localization at the interface due to their over-barrier reflection off the boundary.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162807
Show Author Affiliations
Mikhail S. Bresler, A.F. Ioffe Physical Technical Institute (Russia)
Oleg B. Gusev, A.F. Ioffe Physical Technical Institute (Russia)
Irina N. Yassievich, A.F. Ioffe Physical Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physical Technical Institute (Russia)
Nonna V. Zotova, A.F. Ioffe Physical Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

© SPIE. Terms of Use
Back to Top