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Proceedings Paper

Fabrication and characterization of ZnSe-based blue/green laser diodes
Author(s): Ayumu Tsujimura; Shigeo Yoshii; Shigeo Hayashi; Kazuhiro Ohkawa; Tsuneo Mitsuyu
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Paper Abstract

P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single- quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2micrometers ) and a gain factor of 0.095 cmmicrometers /A were obtained. The optical gain is improved by lowering the dislocation density in the laser structure.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162806
Show Author Affiliations
Ayumu Tsujimura, Matsushita Electric Ind. Co., Ltd. (Japan)
Shigeo Yoshii, Matsushita Electric Ind. Co., Ltd. (Japan)
Shigeo Hayashi, Matsushita Electric Ind. Co., Ltd. (Japan)
Kazuhiro Ohkawa, Matsushita Electric Ind. Co., Ltd. (Japan)
Tsuneo Mitsuyu, Matsushita Electric Ind. Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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