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Proceedings Paper

Strained AlGaInP visible-emitting quantum-well lasers
Author(s): Huw D. Summers; Peter Blood
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Paper Abstract

A series of strained AlGaInP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz equals 65 angstrom, in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures approximately 130 K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162800
Show Author Affiliations
Huw D. Summers, Univ. of Wales College Cardiff (United Kingdom)
Peter Blood, Univ. of Wales College Cardiff (United Kingdom)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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